(China (Mainland))
Product Summary
The K6R4016V1D-TI10 is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4016V1D-TI10 uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016V1D-TI10 is packaged in a 400 mil 32-pin plastic SOJ.
Parametrics
K6R4016V1D-TI10 absolute maixmum ratings: (1)Voltage on Any Pin Relative to VSS VIN, VOUT: -0.5 to 4.6 V; (2)Voltage on VCC Supply Relative to VSS VCC: -0.5 to 4.6 V; (3)Power Dissipation PD: 1.0 W; (4)Storage Temperature TSTG: -65 to 150 ℃; (5)Operating Temperature Commercial TA: 0 to 70 ℃; Industrial TA: -40 to 85 ℃.
Features
K6R4016V1D-TI10 features: (1)Fast Access Time 8,10ns(Max.); (2)Low Power Dissipation; (3)Single 3.3.3V Power Supply; (4)TTL Compatible Inputs and Outputs; (5)Fully Static Operation- No Clock or Refresh required; (6)Three State Outputs; (7)Center Power/Ground Pin Configuration; (8)Operating in Commercial and Industrial Temperature range.
Diagrams
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